onsemi FQD2N60CTM-WS
$ 0.324
Obsolete
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Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FQD2N60CTM-WS.
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2015-12-25
Lifecycle StatusObsolete (Last Updated: 1 day ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 day ago)
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Single N-Channel 600 V 2.1 Ohm 6.7 nC CoolMOS Power Mosfet - TO-252-3, PG-TO252-3, RoHS
Descrizioni
Descrizioni di onsemi FQD2N60CTM-WS fornite dai suoi distributori.
N-Channel Power MOSFET, QFET®, 600 V, 1.9 A, 4.7 Ω, DPAK
Trans MOSFET N-CH 600V 1.9A 3-Pin(2+Tab) DPAK T/R
Qfc 600V 4.7Ohm Dpak/Reel Rohs Compliant: Yes |Onsemi FQD2N60CTM-WS
Compliant Surface Mount 260.37 mg Tape & Reel (TR) 4.7 Ω TO-252-3 EOL (Last Updated: 6 days ago) 235 pF
Power Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252
2.5W(Ta),44W(Tc) 30V 4V@ 250¦ÌA 12nC@ 10 V 1N 600V 4.7¦¸@ 950mA,10V 1.9A 235pF@25V TO-252AA 6.73mm*6.22mm*2.39mm
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
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Specifiche tecniche
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)1.9 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance4.7 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)30 V
Input Capacitance235 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation44 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation2.5 W
Rds On Max4.7 Ω
Turn-Off Delay Time24 ns
Turn-On Delay Time9 ns
Dimensions
Height2.517 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FQD2N60CTM-WS.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità