onsemi FQD11P06TM
$ 0.467
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | FQD11P06TM | 20.000 | 2500 | Tape & Reel | ||||||||
| Newark | FQD11P06TM | 5669 | 5 | Cut Tape | ||||||||
| Verical | FQD11P06TM | 672 | 4 | |||||||||
| Arrow Electronics | FQD11P06TM | 754 | 1 | |||||||||
| Master Electronics | FQD11P06TM | 4919 | 50 |
Cronologia dell'inventario
Tendenza a 3 mesi: +150%
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-09-14
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Descrizioni
Descrizioni di onsemi FQD11P06TM fornite dai suoi distributori.
TRANSISTOR, P-CHANNEL, QFET MOSFET, -60V, -9.4A, 185 MOHM, -55 TO 150C, D2PAK
Power MOSFET, P-Channel, QFET®, -60 V, -9.4 A, 185 mΩ, DPAK
In a Pack of 5, P-Channel MOSFET, 9.4 A, 60 V, 3-Pin DPAK ON Semiconductor FQD11P06TM
MOSFET P-CH 60V 9.4A DPAK / Trans MOSFET P-CH 60V 9.4A 3-Pin(2+Tab) DPAK T/R
P-Channel 60 V 0.185 Ohm Surface Mount Mosfet - TO-252-3
P-CHANNEL QFET MOSFET Power Field-Effect Transistor, 9.4A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, P-CHANNEL, -60V, -9.4A, TO-252-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -9.4A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.15ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 2.5W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: QFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -9.4 / Drain-Source Voltage (Vds) V = -60 / ON Resistance (Rds(on)) mOhm = 185 / Gate-Source Voltage V = 30 / Fall Time ns = 45 / Rise Time ns = 40 / Turn-OFF Delay Time ns = 15 / Turn-ON Delay Time ns = 6.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 38
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +150%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)9.4 A
Current Rating-9.4 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance185 mΩ
Drain to Source Voltage (Vdss)-60 V
Element ConfigurationSingle
Fall Time45 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance550 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation38 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max185 mΩ
Resistance185 mΩ
Rise Time40 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time15 ns
Turn-On Delay Time6.5 ns
Voltage Rating (DC)-60 V
Dimensions
Height2.517 mm
Length6.6 mm
Width6.1 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità