onsemi FQB7P20TM_F085

Trans MOSFET P-CH 200V 7.3A 3-Pin(2+Tab) D2PAK T/R
Obsolete
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Newark
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FQB7P20TM_F0850800Cut Tape
SHENGYU ELECTRONICSFQB7P20TM_F08584551
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Schede tecniche e documenti

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Datasheet7 pagine25 anni fa

Fairchild Semiconductor

Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-11-19
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2022-10-01
LTD Date2023-03-31

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Descrizioni

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Trans MOSFET P-CH 200V 7.3A 3-Pin(2+Tab) D2PAK T/R
Avnet
MOSFET, P CH, -200V, -7.3A, TO-263-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-7.3A; Drain Source Voltage Vds:-200V; On Resistance Rds(on):0.54ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:90W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
Farnell
These P-Channel enchancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS Technology.This advanced Technology has been especially tailored to minimize on- state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and communication mode. These devices are well suited for high efficiency switching DC/DC converters.
Fairchild Semiconductor

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