onsemi FQB4N80TM
$ 1.02
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Cronologia dell'inventario
Tendenza a 3 mesi: -0.04%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Schede tecniche e documenti
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Supply Chain
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
STMicroelectronicsSTB4NK60ZT4
N-channel 600 V, 1.76 Ohm, 4 A SuperMESH(TM) Power MOSFET in D2PAK
STMicroelectronicsSTB3NK60ZT4
STB3NK60ZT4 N-channel MOSFET Transistor, 2.4 A, 600 V, 3-Pin D2PAK
Descrizioni
Descrizioni di onsemi FQB4N80TM fornite dai suoi distributori.
MOSFET Transistor, N Channel, 3.9 A, 800 V, 2.8 ohm, 10 V, 5 V
N-Channel 800 V 3.6 Ohm 25 nC Surface Mount Mosfet - D2PAK-3
N-Channel QFET® MOSFET 800V, 3.9A, 3.6Ω
800V N-CHANNEL MOSFET Power Field-Effect Transistor, 3.9A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N-CH, 800V, 3.9A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.9A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 2.8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 130W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -0.04%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
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Specifiche tecniche
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)3.9 A
Current Rating3.9 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance3.6 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time35 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance880 pF
Max Operating Temperature150 °C
Max Power Dissipation130 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation3.13 W
Rds On Max3.6 Ω
Resistance3.6 Ω
Rise Time45 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time35 ns
Turn-On Delay Time16 ns
Voltage Rating (DC)800 V
Dimensions
Height4.83 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FQB4N80TM.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità