onsemi FQB47P06TM-AM002
$ 1.716
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Cronologia dell'inventario
Tendenza a 3 mesi: -5.61%
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-10-19
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
InfineonIRFZ44ESTRLPBF
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.023Ohm;ID 48A;D2Pak;PD 110W;VGS +/-20V;-55
InfineonIRFZ44ESTRRPBF
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.023Ohm;ID 48A;D2Pak;PD 110W;VGS +/-20V;-55
InfineonIRFZ44ESPBF
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.023Ohm;ID 48A;D2Pak;PD 110W;VGS +/-20V;-55
Descrizioni
Descrizioni di onsemi FQB47P06TM-AM002 fornite dai suoi distributori.
P-Channel Power MOSFET, QFET®, -60 V, -47 A, 26 mΩ, D2PAK
FQB47P06 Series -60 V -47 A 0.026 Ohm SMT P-Channel QFET Mosfet - D2PAK-3
Power MOSFET, P Channel, 60 V, 47 A, 0.026 ohm, TO-263 (D2PAK), Surface Mount
Trans MOSFET P-CH 60V 47A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 47A I(D), 60V, 0.026ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, P, SMD, TO-263; Transistor Polarity:P Channel; Continuous Drain Current Id:47A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):26mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:160W; Transistor Case Style:D2-PAK; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Current Id Max:-47A; Package / Case:D2-PAK; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulse Current Idm:188A; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:10V
Mosfet, -60V, -47A, D2-Pak; Transistor, Polaridad:Canal P; Intensidad Drenador Continua Id:-47A; Tensión Drenaje-Fuente Vds:-60V; Resistencia De Activación Rds(On):26Mohm; Tensión Vgs De Medición Rds(On):-10V; Tensión Umbral Vgs:-4V |Onsemi FQB47P06TM_AM002
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -5.61%
Modelli CAD
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Specifiche tecniche
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins2
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)47 A
Current Rating-47 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance26 mΩ
Drain to Source Voltage (Vdss)-60 V
Dual Supply Voltage60 V
Element ConfigurationSingle
Fall Time195 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance3.6 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation160 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation3.75 W
Rds On Max26 mΩ
Resistance26 mΩ
Rise Time450 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage-4 V
Turn-Off Delay Time100 ns
Turn-On Delay Time50 ns
Voltage Rating (DC)-60 V
Dimensions
Height5.08 mm
Length10.67 mm
Width9.65 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità