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Cronologia dell'inventario
Tendenza a 3 mesi: Restocked
Modelli CAD
0 models available
Parti alternative
0 parti disponibili
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FQAF6N80.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-11-10
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2009-03-09
LTD Date2009-09-09
Descrizioni
Descrizioni di onsemi FQAF6N80 fornite dai suoi distributori.
Trans MOSFET N-CH 800V 4.4A 3-Pin(3+Tab) TO-3PF Rail
90W(Tc) 5V@ 250¦ÌA 31nC@ 10V 1N 800V 1.95¦¸@ 2.2A,10V 1.5pF@25V TO-3PF
Power Field-Effect Transistor, 4.4A I(D), 800V, 1.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: Restocked
Modelli CAD
0 models available
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageSC
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)4.4 A
Current Rating4.4 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance1.95 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time45 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.5 nF
Max Operating Temperature150 °C
Max Power Dissipation90 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation90 W
Rds On Max1.95 Ω
Rise Time70 ns
Turn-Off Delay Time65 ns
Voltage Rating (DC)800 V
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FQAF6N80.