onsemi FQA11N90-F109
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Schede tecniche e documenti
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Modelli CAD
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-10-17
Lifecycle StatusProduction (Last Updated: 5 years ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
STMicroelectronicsSTW12NK90Z
N-channel 900 V, 0.72 Ohm, 11 A, TO-247 Zener-protected SuperMESH(TM) Power MOSFET
STMicroelectronicsSTW12NK95Z
N-CHANNEL 950V - 0.72 Ohm - 10A - TO-247 Zener-Protected SuperMESH™ Power MOSFET
STMicroelectronicsSTP12NK80Z
N-channel 800 V, 0.65 Ohm, 10.5 A Zener protected SuperMESH(TM) Power MOSFET in TO-220 package
Descrizioni
Descrizioni di onsemi FQA11N90-F109 fornite dai suoi distributori.
N-Channel Power MOSFET, QFET®, 900V, 11.4A, 960mΩ, TO-3P
FQA11N90 Series 900 V 11.4 A 960 mOhm N-Channel QFET Mosfet - TO-3PN
300W(Tc) 30V 5V@ 250¦ÌA 94nC@ 10 V 1N 900V 960m¦¸@ 5.7A,10V 11.4A 3.5nF@25V TO-3PN 23.8mm
Trans MOSFET N-CH 900V 11.4A 3-Pin(3+Tab) TO-3P Rail
MOSFET, N-CH, 900V, 11.4A, 150DEG C/300W; Available until stocks are exhausted Alternative available
场效应管, MOSFET, N沟道, 900V, 11.4A, 150度 C/300W;
Power Field-Effect Transistor, 11.4A I(D), 900V, 0.96ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
FQA11N90_F109 Fairchild/ON Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Specifiche tecniche
Physical
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.401 g
Technical
Continuous Drain Current (ID)11.4 A
Drain to Source Breakdown Voltage900 V
Drain to Source Resistance960 mΩ
Drain to Source Voltage (Vdss)900 V
Element ConfigurationSingle
Fall Time90 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance3.5 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation300 W
Min Breakdown Voltage900 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation300 W
Rds On Max960 mΩ
Rise Time135 ns
Schedule B8541290080
Turn-Off Delay Time165 ns
Turn-On Delay Time65 ns
Dimensions
Height23.8 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FQA11N90-F109.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità