onsemi FJN4303RTA
$ 0.022
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | FJN4303RTA | 6768 | 50K | 16h | ||||||||
| Rochester Electronics | FJN4303RTA | 83.186 | 13h | |||||||||
| Verical | FJN4303RTA | 77.500 | 15385 | |||||||||
| Flip Electronics | FJN4303RTA | 3384 | 2d | |||||||||
| Worldway Electronics | FJN4303RTA | 27.384 | 7 | 13h |
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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1 parte disponibile
Modelli CAD
Scarica il simbolo onsemi FJN4303RTA, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 SnapEDA | Impronta | Scarica |
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Questo componente
Parti alternative
Price @ 1000
$ 0.022
$ 0.025
Stock
241,714
160,426
Authorized Distributors
4
2
Mount
Through Hole
Through Hole
Case/Package
TO-92-3
TO-92-3
Polarity
PNP
PNP
Collector Emitter Breakdown Voltage
50 V
50 V
Max Collector Current
100 mA
100 mA
Transition Frequency
200 MHz
200 MHz
Collector Emitter Saturation Voltage
-300 mV
-
hFE Min
56
56
Power Dissipation
300 mW
300 mW
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2002-07-19
Lifecycle StatusObsolete (Last Updated: 1 day ago)
LTB Date2020-01-16
LTD Date2020-07-16
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 day ago)
Parti correlate
onsemiFJN4303RBU
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
onsemiFJN4314RBU
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 300mW Through Hole TO-92-3
onsemiFJN4302RTA
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Descrizioni
Descrizioni di onsemi FJN4303RTA fornite dai suoi distributori.
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Trans Digital BJT PNP 50V 100mA 3-Pin TO-92 Ammo
Pre-Biased "digital" Transistor,50V V(Br)Ceo,100Ma I(C),to-92 Rohs Compliant: Yes
Transistors Switching - Resistor Biased PNP Si Transistor Epitaxial
PNP Epitaxial Silicon Transistor with Bias Resistor
NPN Triple Diffused Planar Silicon Transistor. ONSSPCTRNSTVU6M5P;
TRANSISTOR, PNP, 50V, 0.1A, TO-92
Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.
TRANSISTOR, PNP, 50V, 0.1A, TO-92; Digital Transistor Polarity: Single PNP; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 22kohm; Base-Emitter Resistor R2: 22kohm; Re
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageTO-92-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight240 mg
Technical
Collector Base Voltage (VCBO)-50 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage-300 mV
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current-100 mA
Current Rating-100 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-10 V
hFE Min56
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityPNP
Power Dissipation300 mW
Schedule B8541210080
Transition Frequency200 MHz
Voltage Rating (DC)-50 V
Dimensions
Height5.33 mm
Length5.2 mm
Width4.19 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità