onsemi FJB3307DTM
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Win Source | WS-FJB3307DTM | 8000 | 35 | 3h | ||||||||
| Worldway Electronics | FJB3307DTM | 8107 | 7 | Tape & Reel | 1h | |||||||
| Anlinkda | FJB3307DTM | 40.958 | 1h | |||||||||
| SHENGYU ELECTRONICS | FJB3307DTM | 10.629 | 1 | 4d | ||||||||
| ALLICDATA ELECTRONICS | FJB3307DTM | 1000 | Tape & Reel | 1d |
Modelli CAD
Scarica il simbolo onsemi FJB3307DTM, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-04-29
Lifecycle StatusObsolete (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)
Parti correlate
NXP SemiconductorsBUJ105AB,118
Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
Descrizioni
Descrizioni di onsemi FJB3307DTM fornite dai suoi distributori.
Trans GP BJT NPN 400V 8A 3-Pin(2+Tab) D2PAK
Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-263AB, Plastic/Epoxy, 2 Pin
High Voltage Fast Switching NPN Power Transistor
TRANSISTOR, NPN, 400V, 8A, D2PAK; Transi; TRANSISTOR, NPN, 400V, 8A, D2PAK; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:1.72W; DC Collector Current:8A; DC Current Gain hFE:40; No. of Pins:2; Package / Case:3-D2-PAK
The FJB3307D is a 700 V 8 A NPN Silicon Epitaxial Planar Transistor. The FJB3307D is designed for high speed switching applications which utilizes the industry standard surface mount TO-263 (D2PAK)package offering flexibility in design and excellent Power Dissipation.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Specifiche tecniche
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.31247 g
Technical
Collector Base Voltage (VCBO)700 V
Collector Emitter Breakdown Voltage400 V
Collector Emitter Saturation Voltage3 V
Collector Emitter Voltage (VCEO)400 V
Continuous Collector Current8 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)9 V
hFE Min5
Max Breakdown Voltage400 V
Max Collector Current8 A
Max Frequency1 MHz
Max Operating Temperature150 °C
Max Power Dissipation80 W
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation1.72 W
Dimensions
Height4.83 mm
Length10.67 mm
Width9.65 mm
Conformità
Classificazione ambientale
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità