onsemi FGL60N100BNTD

IGBT 1000V 60A 180W TO264 / Trans IGBT Chip N-CH 1000V 60A 180000mW 3-Pin(3+Tab) TO-264 Tube
Obsolete
Pagina del produttoreScheda dati

Prezzo e stock

Vedi tutte le interruzioni di prezzo
DistributorSKUMinPkg
FarnellFGL60N100BNTD.01
5h
element14 APACFGL60N100BNTD.01
39m
Win SourceWS-FGL60N100BNTD20556
6h
Worldway ElectronicsFGL60N100BNTD11.6277Tube
5h
IC Components Ltd.FGL60N100BNTD5178
1d

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi FGL60N100BNTD.

Upverter

Technical Drawing1 pagina6 anni fa

Newark

IHS

onsemi

Fairchild Semiconductor

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-03-17
Lifecycle StatusObsolete (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

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Descrizioni

Descrizioni di onsemi FGL60N100BNTD fornite dai suoi distributori.

IGBT 1000V 60A 180W TO264 / Trans IGBT Chip N-CH 1000V 60A 180000mW 3-Pin(3+Tab) TO-264 Tube
Win Source
FGL60N100 Series 1000 V 60 A Through Hole NPT Trench IGBT - TO-264-3L
Future Electronics
TRANSISTOR,IGBT,N-CHAN+DIODE,1kV V(BR)CES,60A I(C),TO-264
Newark
IGBT, NPT, TO-264; DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):2.9V; Power Dissipation Pd:180W; Collector Emitter Voltage V(br)ceo:1kV; Transistor Case Style:TO-264; No. of Pins:3Pins; Operatin
element14 APAC
Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications.
Fairchild Semiconductor
IGBT, NPT, TO-264; Transistor Type:IGBT; Transistor Polarity:NPN; Voltage, Vces:1000V; Current Ic Continuous a Max:60A; Voltage, Vce Sat Max:2.9V; Power Dissipation:180W; Case Style:TO-264; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:1000V; Current Ic @ Vce Sat:60A; Current, Icm Pulsed:120A; Power, Pd:180W; Time, Rise:320ns
Farnell
Trench insulated gate bipolar transistors (IGBTs) with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for Induction Heating ( I-H ) applications Product Highlights: High Speed Switching Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A High Input Impedance Built-in Fast Recovery Diode
North Star Micro

Immagini

TME
Augswan
Newark
Farnell
iiiC
Future Electronics

Alias del produttore

onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:

  • ON Semiconductor
  • ONS
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  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • FGL60N100BNTD.