onsemi FGD3N60UNDF
$ 0.611
EOL
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | FGD3N60UNDF | 2157 | 459 | |||||||||
| Rochester Electronics | FGD3N60UNDF | 2157 | 5h | |||||||||
| Farnell | FGD3N60UNDF | 0 | 1 | Cut Tape | 1d | |||||||
| Microchip USA | FGD3N60UNDF | 134 | 3500 | 21h | ||||||||
| Component Stockers USA | FGD3N60UNDF | 14.334 | 19h |
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2013-01-19
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2023-03-30
LTD Date2023-09-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
Parti correlate
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onsemiSGR6N60UFTF
Tape & Reel (TR) Surface Mount N-CHANNEL SINGLE IGBT Transistor 2.6V @ 15V 3A 6A 30W 15ns/60ns
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Trans IGBT Chip N-CH 600V 6A 48000mW Automotive 3-Pin(2+Tab) DPAK T/R
InfineonIRGR3B60KD2TRP
52W 7.8A 600V NPT (non-penetrating type) DPAK IGBT Transistors / Modules ROHS
Descrizioni
Descrizioni di onsemi FGD3N60UNDF fornite dai suoi distributori.
Trans IGBT Chip N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R
IGBT, 600V, 3A, Short Circuit Rated
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252
晶体管, IGBT, 600V, 6A, 150度 C, 60W;
Using advanced NPT IGBT Technology, Fairchild’s the NPT IGBTs offer the optimum performance for low power inverter-driven applications where low-losses and short circuit ruggedness feature are essential.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2.4 V
Collector Emitter Voltage (VCEO)600 V
Element ConfigurationSingle
Max Breakdown Voltage600 V
Max Collector Current6 A
Max Operating Temperature150 °C
Max Power Dissipation60 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation60 W
Reverse Recovery Time21 ns
Dimensions
Height2.3 mm
Length6.6 mm
Width6.1 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità