onsemi FGA30S120P
$ 3.657
EOL
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Cronologia dell'inventario
Tendenza a 3 mesi: -0.12%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FGA30S120P.
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-12-12
Lifecycle StatusEOL (Last Updated: 6 days ago)
LTB Date2023-03-30
LTD Date2023-09-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 6 days ago)
Parti correlate
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STMicroelectronicsSTGW38IH130D
Igbt Single Transistor, 63 A, 1.3 Kv, 250 W, 1.3 Kv, To-247, 3 Rohs Compliant: Yes
InfineonIHW30N135R3FKSA1
Reverse Conducting IGBT With Monolithic Body Diode 1350V 30A 3-Pin TO-247
Descrizioni
Descrizioni di onsemi FGA30S120P fornite dai suoi distributori.
IGBT 1300V 60A 348W TO3P / Trans IGBT Chip N-CH 1300V 60A 348000mW 3-Pin(3+Tab) TO-3P Tube
IGBT, 1.3KV, 60A, 175DEG C, 348W; Available until stocks are exhausted
IGBT, 1300V, 30A, Shorted-anode
Insulated Gate Bipolar Transistor, 60A I(C), 1300V V(BR)CES, N-Channel
IGBT Transistors Shorted AnodeTM IGBT
晶体管, IGBT, 1.3KV, 60A, 175度 C, 348W;
IGBT TRENCH/FS 1300V 60A TO3PN
INSULATED GATE BIPOLAR TRANSISTO
Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -0.12%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.401 g
Technical
Collector Emitter Breakdown Voltage1.3 kV
Collector Emitter Saturation Voltage1.75 V
Collector Emitter Voltage (VCEO)1.3 kV
Continuous Collector Current60 A
Element ConfigurationSingle
Fall Time350 ns
Max Collector Current60 A
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation500 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation348 W
Rise Time490 ns
Schedule B8541290080
Turn-Off Delay Time620 ns
Turn-On Delay Time39 ns
Dimensions
Height23.8 mm
Length15.8 mm
Width5 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FGA30S120P.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità