onsemi FDU8882
$ 0.604
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | FDU8882 | 518 | 464 | |||||||||
| Rochester Electronics | FDU8882 | 518 | 12h | |||||||||
| Farnell | FDU8882 | 0 | 1 | 1d | ||||||||
| Microchip USA | FDU8882 | 323 | 600 | Tube | 5h | |||||||
| Win Source | WS-FDU8882 | 7000 | 11 | 13h |
Cronologia dell'inventario
Tendenza a 3 mesi: Restocked
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-10-15
Lifecycle StatusProduction (Last Updated: 4 months ago)
LTB Date2008-12-02
LTD Date2009-06-02
Parti correlate
InfineonIRFU3707ZPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7.5Milliohms;ID 56A;I-Pak (TO-251AA);PD 50W
onsemiNTD4810N-35G
Tube Through Hole N-Channel Single Mosfet Transistor 9A Ta 54A Tc 54A 2W 2.6ns
onsemiNTD4810N-1G
Tube Through Hole N-Channel Single Mosfet Transistor 9A Ta 54A Tc 54A 2W 2.6ns
onsemiNTD4979N-35G
MOSFET N-CH 30V 9.4A IPAK TRIMME / Trans MOSFET N-CH 30V 12.7A 3-Pin(3+Tab) IPAK Rail
Descrizioni
Descrizioni di onsemi FDU8882 fornite dai suoi distributori.
Power MOSFET, N Channel, 30 V, 55 A, 0.0115 ohm, TO-251AA, Through Hole
Trans MOSFET N-CH 30V 55A 3-Pin (3+Tab) TO-251 Rail
30V,55A,11 OHM, NCH, IPAK, POWER TRENCH MOSFET
Power Field-Effect Transistor, 35A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
003, PLASTIC MOLDED, TO-251 IPAK PKG, THRU-HOLE (39)<AZ
MOSFET N-CH 30V 12.6A/55A IPAK
MOSFET, N, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:30V; On Resistance Rds(on):11.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Transistor Case Style:I-PAK; SVHC:No SVHC (15-Dec-2010); Alternate Case Style:TO-251; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Length:9.8mm; Lead Spacing:2.285mm; No. of Transistors:1; Package / Case:IPAK; Power Dissipation Pd:55W; Pulse Current Idm:50A; Reverse Recovery Time trr Typ:82ns; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: Restocked
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)12.6 A
Current Rating55 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance15 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.26 nF
Max Operating Temperature175 °C
Max Power Dissipation55 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation55 W
Rds On Max11.5 mΩ
Rise Time82 ns
Turn-Off Delay Time40 ns
Voltage Rating (DC)30 V
Conformità
Classificazione ambientale
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità