onsemi FDU7N60NZTU

N-Channel Power MOSFET, UniFETTM II, 600 V, 5.5 A, 1.25 Ω, IPAK
$ 0.463
Obsolete
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Verical
3
FDU7N60NZTU8385673
Rochester ElectronicsFDU7N60NZTU64.295
5h
Microchip USAFDU7N60NZTU456600Tray
7d
Win SourceWS-FDU7N60NZTU463060
6h
Worldway ElectronicsFDU7N60NZTU19.0107Tube
37m

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IHS

Datasheet9 pagine12 anni fa
Datasheet0 pagine0 anni fa

onsemi

Fairchild Semiconductor

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Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-03-14
Lifecycle StatusObsolete (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

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Descrizioni

Descrizioni di onsemi FDU7N60NZTU fornite dai suoi distributori.

N-Channel Power MOSFET, UniFETTM II, 600 V, 5.5 A, 1.25 Ω, IPAK
onsemi
Trans MOSFET N-CH 600V 5.5A 3-Pin(3+Tab) IPAK Rail
Verical
RAIL / UNIFET2 600V N-CHANNEL MOSFET, IPAK
Newark
MOSFET N-Channel MOSFET 600V 5.5A 1.25Ohm
Digi-ic_SMART PIONEER
Power Field-Effect Transistor, 5.5A I(D), 600V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
IHS
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Fairchild Semiconductor

Immagini

RS
Rochester Electronics

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