onsemi FDS2672
$ 0.997
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: -42.77%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Modelli CAD
Scarica il simbolo onsemi FDS2672, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 Component Search Engine | SimboloImpronta | 3D | Scarica |
 EE Concierge | SimboloImpronta | ||
 SnapEDA | Impronta | Scarica |
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-09-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Descrizioni
Descrizioni di onsemi FDS2672 fornite dai suoi distributori.
N-Channel UltraFET Trench® MOSFET 200V, 3.9A, 70mΩ
N-Channel 200 V 70 mOhm UltraFET Trench® Mosfet - SOIC-8
Power MOSFET, N Channel, 200 V, 3.9 A, 0.07 ohm, SOIC, Surface Mount
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:3.9A; On Resistance, Rds(on):0.07ohm; Rds(on) Test Voltage, Vgs:2.9V; Threshold Voltage, Vgs Typ:20V ;RoHS Compliant: Yes
This single N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced UItraFET Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
MOSFET, N, SO-8; Transistor Polarity:N; Max Current Id:3.9A; Max Voltage Vds:200V; On State Resistance:0.07ohm; Rds Measurement Voltage:10V; Max Voltage Vgs:20V; Power Dissipation:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:Cobalt dichloride; Avalanche Single Pulse Energy Eas:37.5mJ; Case Style:SOIC; Cont Current Id:3.9A; Max On State Resistance:0.07ohm; Max Voltage Vgs th:4V; Min Voltage Vgs th:2V; Pin Configuration:D(5,6,7,8), S(1,2,3), G(4); Power Dissipation Pd:2.5W; Pulse Current Idm:50A; Termination Type:SMD; Transistor Type:MOSFET; Typ Capacitance Ciss:1905pF; Typ Voltage Vds:200V; Typ Voltage Vgs th:2.9V; Voltage Vgs Rds on Measurement:10V; SVHC (Additional):Bis (2-ethyl(hexyl)phthalate) (DEHP)
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -42.77%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight130 mg
Technical
Continuous Drain Current (ID)3.9 A
Current Rating3.9 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance148 mΩ
Drain to Source Voltage (Vdss)200 V
Dual Supply Voltage200 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.535 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs2.9 V
Number of Channels1
Number of Elements1
Power Dissipation1 W
Rds On Max70 mΩ
Resistance70 mΩ
Rise Time10 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage2.9 V
Turn-Off Delay Time35 ns
Turn-On Delay Time22 ns
Voltage Rating (DC)200 V
Dimensions
Height1.75 mm
Length5 mm
Width4 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità