onsemi FDPF17N60NT

N-Channel Power MOSFET, UniFETTM II, 600 V, 17 A, 340 mΩ, TO-220F
$ 1.567
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Datasheet9 pagine2 anni fa
Datasheet8 pagine12 anni fa

Master Electronics

Farnell

onsemi

Fairchild Semiconductor

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Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-07-21
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descrizioni

Descrizioni di onsemi FDPF17N60NT fornite dai suoi distributori.

N-Channel Power MOSFET, UniFETTM II, 600 V, 17 A, 340 mΩ, TO-220F
Power Field-Effect Transistor, 17A I(D), 600V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET,N CH,600V,17A,TO220F; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.29ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:62.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts..

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  • ON Semiconductor Inc.
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