onsemi FDP085N10A-F102
$ 1.238
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Cronologia dell'inventario
Tendenza a 3 mesi: -4.49%
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-06-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
InfineonIPP083N10N5AKSA1
MOSFET N-CH 100V 73A TO220-3 / N-Channel 100 V 73A (Tc) 100W (Tc) Through Hole PG-TO220-3
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STMicroelectronicsSTP120NF10
N-channel 100 V, 0.009 Ohm, 110 A, STripFET(TM) II Power MOSFET in TO-220 package
STMicroelectronicsSTP80N10F7
N-channel 100 V, 0.0085 Ohm typ., 80 A STripFET F7 Power MOSFET in TO-220 package
Descrizioni
Descrizioni di onsemi FDP085N10A-F102 fornite dai suoi distributori.
N-Channel PowerTrench® MOSFET 100V, 96A, 8.5mΩ
Trans MOSFET N-CH 100V 96A 3-Pin(3+Tab) TO-220 Rail
FDP Series 100V 8.5mOhm 188W Through Hole N-Channel PowerTrench® Mosfet - TO-220
Power Field-Effect Transistor, 96A I(D), 100V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N-CH, 100V, 96A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 96A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.00735ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Po
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -4.49%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-220
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)96 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance8.5 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.695 nF
Max Operating Temperature175 °C
Max Power Dissipation188 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation188 W
Rds On Max8.5 mΩ
Rise Time22 ns
Schedule B8541290080
Turn-Off Delay Time29 ns
Turn-On Delay Time18 ns
Dimensions
Height15.215 mm
Length10.36 mm
Width4.672 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità