onsemi FDN308P
$ 0.217
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Cronologia dell'inventario
Tendenza a 3 mesi: -3.81%
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2001-02-27
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
InfineonIRLML2402GTRPBF
MOSFET, 20V, 1.2A, 250 MOHM, 2.6 NC QG, LOGIC LEVEL, SOT-23, HALOGEN-FREE
Descrizioni
Descrizioni di onsemi FDN308P fornite dai suoi distributori.
P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -1.5A, 125mΩ
MOSFET P-CH 20V 1.5A SSOT-3 / Trans MOSFET P-CH 20V 1.5A 3-Pin SOT-23 T/R
P-Channel 20 V 125 mOhm 2.5 V Specified PowerTrench Mosfet - SSOT-3
This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).
MOSFET, P CH -1.5A -20V SSOT-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-1.5A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):125mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SSOT; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-1.5A; Package / Case:SSOT; Power Dissipation Pd:500mW; Termination Type:SMD; Voltage Vds Typ:-20V; Voltage Vgs Max:-1V; Voltage Vgs Rds on Measurement:-4.5V
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -3.81%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Specifiche tecniche
Physical
Case/PackageTO-236-3
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Continuous Drain Current (ID)1.5 A
Current Rating-1.5 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance125 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance341 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs-1 V
Number of Channels1
Number of Elements1
Power Dissipation460 mW
Rds On Max125 mΩ
Resistance125 MΩ
Rise Time10 ns
Schedule B8541210080
Threshold Voltage-1 V
Turn-Off Delay Time12 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)-20 V
Dimensions
Height1.12 mm
Length2.92 mm
Width1.4 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità