onsemi FDMT80060DC
$ 4.581
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Cronologia dell'inventario
Tendenza a 3 mesi: -31.47%
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2015-07-31
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Single N-Channel 60V 1.5 mOhm 300 nC HEXFET® Power Mosfet - DirectFET®
Descrizioni
Descrizioni di onsemi FDMT80060DC fornite dai suoi distributori.
N-Channel PowerTrench® MOSFET, Dual CoolTM 88, 60V, 292A, 1.1mΩ
Power Field-Effect Transistor, 292A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
MOSFET, N-CH, 60V, 292A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:292A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.00087ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Po
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -31.47%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
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Specifiche tecniche
Physical
MountSurface Mount
Number of Pins8
Weight248.52072 mg
Technical
Continuous Drain Current (ID)292 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance870 µΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time19 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance20.17 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation156 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.2 W
Rds On Max1.1 mΩ
Rise Time47 ns
Schedule B8541290080
Turn-Off Delay Time66 ns
Turn-On Delay Time75 ns
Dimensions
Height1.02 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità