onsemi FDMS86500L
$ 1.49
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Cronologia dell'inventario
Tendenza a 3 mesi: +343%
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Schede tecniche e documenti
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-04-05
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
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Descrizioni
Descrizioni di onsemi FDMS86500L fornite dai suoi distributori.
FDMS86500L Series 60 V 158 A 2.5 mOhm N-Channel PowerTrench® MOSFET - POWER-56
N-Channel PowerTrench® MOSFET 60V, 158A, 2.5mΩ
Power Field-Effect Transistor, 25A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
2.5W(Ta)，104W(Tc) 20V 3V@ 250µA 165nC@ 10 V 1individualNChannel 60V 2.5mΩ@ 25A,10V 25A，80A 12.53nF@30V PQFN-8，SOIC-7，SOIC-8 SMD mount 1.1mm(height)
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low RDS(on), fast switching speed and body diode reverse recovery performance.
MOSFET, N CH, 60V, 80A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0021ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:104W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +343%
Modelli CAD
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Specifiche tecniche
Physical
Case/PackageTO-220-3
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight68.1 mg
Technical
Continuous Drain Current (ID)25 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance2.5 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time7.8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance12.53 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation104 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max2.5 mΩ
Resistance2.5 MΩ
Rise Time16 ns
Schedule B8541290080
Threshold Voltage1.8 V
Turn-Off Delay Time63 ns
Turn-On Delay Time27 ns
Dimensions
Height1.1 mm
Length5 mm
Width6 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDMS86500L.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità