onsemi FDMS86300DC
$ 1.39
Production
Prezzo e stock
Distributori autorizzati
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | FDMS86300DC | 9000 | 3K | 21h | ||||||||
| Newark | FDMS86300DC | 3359 | 1 | |||||||||
| Verical | FDMS86300DC | 3000 | 242 | |||||||||
| Rochester Electronics | FDMS86300DC | 3000 | 19h | |||||||||
| DigiKey | FDMS86300DCFSCT-ND | 369 | 1 | Cut Tape |
Cronologia dell'inventario
Tendenza a 3 mesi: -12.59%
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-03-23
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Descrizioni
Descrizioni di onsemi FDMS86300DC fornite dai suoi distributori.
MOSFET, N CH, 80V, 0.0026OHM, 76A, POWER 56-8; Transistor Polarity:N Channel; Co
N-Channel PowerTrench® MOSFET, Dual CoolTM 56, 80V, 110A, 3.1mΩ
Dual N-Channel 80 V 5 mOhm 84 nC 125 W PowerTrench SMT Mosfet - PQFN-8
Power MOSFET, N Channel, 80 V, 76 A, 0.0026 ohm, Power 56, Surface Mount
N-CHANNEL DUAL 56 POWERTRENCH MOSFET Power Field-Effect Transistor, 24A I(D), 80V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
MOSFET, N CH, 80V, 76A, POWER 56-8; Transistor Polarity:N Channel; Continuous Drain Current Id:76A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.3V; Power Dissipation Pd:125W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:-; SVHC:No SVHC (20-Jun-2013)
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -12.59%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight90 mg
Technical
Continuous Drain Current (ID)24 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance3.1 mΩ
Drain to Source Voltage (Vdss)80 V
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.005 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Nominal Vgs3.3 V
Number of Channels1
Number of Elements1
Power Dissipation3.2 W
Rds On Max3.1 mΩ
Rise Time25 ns
Schedule B8541290080
Threshold Voltage2.5 V
Turn-Off Delay Time35 ns
Turn-On Delay Time29 ns
Dimensions
Height1.05 mm
Length5.1 mm
Width5.85 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità