onsemi FDMS86102LZ

FDMS86102LZ N-Channel MOSFET, 37 A, 100 V PowerTrench, 8-Pin PQFN ON Semiconductor
$ 1.08
Production
Scheda dati
Pagina del produttore

Prezzo e stock

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi FDMS86102LZ.

Cronologia dell'inventario

Trend di 3 mesi:
-1.37%

Modelli CAD

Scarica il simbolo onsemi FDMS86102LZ, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.

FONTEeCADmCADFILE
Component Search Engine
SimboloImpronta
3D
Scarica
EE Concierge
SimboloImpronta
SnapEDA
SimboloImpronta
Scarica
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.

Supply Chain

Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-05-26
Lifecycle StatusProduction (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 days ago)

Parti correlate

Shielded Gate PowerTrench® MOSFET, N-Channel, 100 V, 35 A, 22.5 mΩ
InfineonIRF7495PBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 18Milliohms;ID 7.3A;SO-8;PD 2.5W;VGS +/-20
InfineonIRF7853TRPBF
Single N-Channel 100 V 18 mOhm 39 nC HEXFET® Power Mosfet - SOIC-8
InfineonIRF7495TRPBF
Single N-Channel 100 V 2.5 W 34 nC Hexfet Power Mosfet Surface Mount - SOIC-8
onsemiFDS3672
MOSFET N-CH 100V 7.5A 8-SOIC / Trans MOSFET N-CH 100V 7.5A 8-Pin SOIC T/R
N-Channel Shielded Gate Power Trench® MOSFET 100V, 22A, 24mΩ

Descrizioni

Descrizioni di onsemi FDMS86102LZ fornite dai suoi distributori.

FDMS86102LZ N-Channel MOSFET, 37 A, 100 V PowerTrench, 8-Pin PQFN ON Semiconductor
N-Channel Shielded Gate PowerTrench® MOSFET 100V, 22A, 25mΩ
N-Channel 100 V 25 mO Surface Mount PowerTrench MosFet - Power-56-8
Power Field-Effect Transistor, 7A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
MOSFET, N CH, 100V, 22A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0186ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:69W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor's advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.

Alias del produttore

onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON Semiconductor / Fairchild
  • ON SEMICOND
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • onsemi / Fairchild
  • ON SEMICONDUCTOR CORP
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • FDMS86102LZ.