onsemi FDMS7672
$ 0.501
EOL
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-01-08
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2025-01-05
LTD Date2025-07-05
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
Descrizioni
Descrizioni di onsemi FDMS7672 fornite dai suoi distributori.
N-Channel 30 V 5.0 mOhm Surface Mount Power Trench Mosfet - Power 56
N-Channel PowerTrench® MOSFET 30V, 5.0mΩ
Power Field-Effect Transistor, 19A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
MOSFET, N CH, 30V, 28A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0036ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:48W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
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Specifiche tecniche
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight68.1 mg
Technical
Continuous Drain Current (ID)19 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time4 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance2.96 nF
Max Operating Temperature150 °C
Max Power Dissipation48 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Elements1
Power Dissipation2.5 W
Rds On Max5 mΩ
Resistance5 MΩ
Rise Time5 ns
Schedule B8541290080
Turn-Off Delay Time25 ns
Turn-On Delay Time13 ns
Dimensions
Height1.05 mm
Length5 mm
Width6 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità