onsemi FDMS7602S
$ 0.679
Production
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Cronologia dell'inventario
Tendenza a 3 mesi: -1.62%
Modelli CAD
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Modelli CAD
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Supply Chain
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-01-22
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
InfineonIRFHM8330TRPBF
Single N-Channel 30 V 6.6 mOhm 20 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
InfineonIRF8113TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 4.7Milliohms;ID 17.2A;SO-8;PD 2.5W;VGS +/-2
InfineonIRF8113PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 4.7Milliohms;ID 17.2A;SO-8;PD 2.5W;VGS +/-2
Descrizioni
Descrizioni di onsemi FDMS7602S fornite dai suoi distributori.
2.5W 20V 3V@ 250¦ÌA 28nC@ 10V 2N 30V 7.5m¦¸@ 12A,10V 12A,17A 1.75nF@15V DFN 6mm*5mm*800¦Ìm
Dual N-Channel PowerTrench® MOSFET 30V, 30A
FDMS7602S Series 30 V 12 A/17 A SMT Dual N-Ch PowerTrench® MOSFET - POWER-56
Trans MOSFET N-CH Si 30V 12A/17A 8-Pin DFN EP T/R
Power Field-Effect Transistor, 12A I(D), 30V, 0.005ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N Channel 30V 8 Pin Power 56
RS APAC
DUAL N CH MOSFET, POWERTRENCH, 30V, 30A,; DUAL N CH MOSFET, POWERTRENCH, 30V, 30A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:30A; Drain Source Voltage Vds, N Channel:30V; On Resistance Rds(on), N Channel:0.0075ohm
This device includes two specialized N-Channel MOSFETs in a dual MLP package.The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -1.62%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Contact PlatingGold
MountSurface Mount
Number of Pins8
Number of Terminals6
Weight211 mg
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance5 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time3.2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.75 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Channels2
Number of Elements2
Power Dissipation1 W
Rds On Max7.5 mΩ
Resistance7.5 MΩ
Rise Time3.8 ns
Threshold Voltage1.8 V
Turn-Off Delay Time27 ns
Dimensions
Height800 µm
Length5 mm
Width6 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità