UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.

Fairchild Semiconductor

MOSFET, N, SMD, MLP; Transistor Polarity:N Channel; Continuous Drain Current Id:10.6A; Drain Source Voltage Vds:60V; On Resistance Rds(on):11.5mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:3.2V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:10.6A; Package / Case:Power 56; Power Dissipation Pd:2.5W; Pulse Current Idm:60A; SMD Marking:FDMS5672; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:3.2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

element14 APAC

Immagini

Alias del produttore

onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:

ON Semiconductor
ONS
ONSEMICON
ON SEM
ON SEMICONDUCTO
ON SEMICONDUCTORS
ONSEMIC
ON Semicondu
OSC
ONSE
ON Semiconductor / Fairchild
ON SEMICOND
SCG
ON Semiconductor Cor
ON SEMICO
ONSM
onsemi / Fairchild
ON SEMICONDUCTOR CORP
MOT/ON SEMI
Fairchild/ONSemiconductor
ON Semiconductor Corporation
ON4
ON Semi - ON Semiconductor
ON SEMICONDUCT
ON-SEMI SCG
ON Semiconductor Inc.
onsemiconductor
On Semiconductor Ltd

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

FDMS5672.

Cronologia dell'inventario

Tendenza a 3 mesi: -68.38%

Modelli CAD

Scarica il simbolo, l'impronta e il 3D STEP

Parti alternative

0 parti disponibili

Specifiche tecniche

Physical

Contact PlatingGold

MountSurface Mount

Number of Pins8

Number of Terminals8

Weight231 mg

Technical

Continuous Drain Current (ID)10.6 A

Current Rating22 A

Drain to Source Breakdown Voltage60 V

Drain to Source Resistance18 mΩ

Drain to Source Voltage (Vds)60 V

Dual Supply Voltage60 V

Element ConfigurationSingle

Fall Time8 ns

Gate to Source Voltage (Vgs)20 V

Input Capacitance2.8 nF

Max Junction Temperature (Tj)150 °C

Max Operating Temperature150 °C

Max Power Dissipation78 W

Min Breakdown Voltage60 V

Min Operating Temperature-55 °C

Nominal Vgs3.2 V

Number of Channels1

Number of Elements1

PackagingCut Tape

Power Dissipation78 W

Rds On Max11.5 mΩ

Resistance11.5 MΩ

Rise Time17 ns

Schedule B8541290080

TerminationSMD/SMT

Threshold Voltage3.2 V

Turn-Off Delay Time22 ns

Turn-On Delay Time16 ns

Voltage Rating (DC)60 V

Dimensions

Height800 µm

Length5 mm

Width6 mm

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi FDMS5672.

IHS

Datasheet0 pagine0 anni fa

Fairchild Semiconductor

onsemi

Farnell

DigiKey

Conformità

Classificazione ambientale

China RoHSCompliant

Lead FreeLead Free

REACH SVHCUnaffected

RoHSCompliant

Dichiarazioni di conformità

Rohs Statement3 pagine5 anni fa

Reach Statement3 pagine13 anni fa

Materials Sheet3 pagine13 anni fa

Materials Sheet3 pagine12 anni fa

Reach Statement3 pagine12 anni fa

Reach Statement8 pagine11 anni fa

Rohs Statement1 pagina13 anni fa

Rohs Statement1 pagina14 anni fa

Reach Statement2 pagine13 anni fa

Rohs StatementN/AN/A