onsemi FDMS5352

MOSFET, N CH, 60V, 13.6A, POWER56; Transistor Polarity: N Channel; Continuous Drain C
$ 2.784
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Prezzo e stock

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Distributore
SKU
Min
Pkg
Prezzi all'ingrosso
Newark
FDMS5352
0
3K
Tape & Reel
USD
1,320
Onlinecomponents.com
FDMS5352
0
750
Bulk
USD
3,840
1,400
Future Electronics
FDMS5352
0
3K
Tape & Reel
USD
3,770
Master Electronics
FDMS5352
0
750
USD
3,840
1,400
Avnet
FDMS5352
0
3K
USD
1,361
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Schede tecniche e documenti

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Upverter

Technical Drawing1 pagina4 anni fa

Master Electronics

IHS

Fairchild Semiconductor

onsemi

Cronologia dell'inventario

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Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-04-09
Lifecycle StatusProduction (Last Updated: 1 week ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 1 week ago)

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Descrizioni

Descrizioni di onsemi FDMS5352 fornite dai suoi distributori.

MOSFET,N CH,60V,13.6A,POWER56; Transistor Polarity:N Channel; Continuous Drain C
Newark
N-Channel Power Trench® MOSFET 60V, 49A, 6.7mΩ
onsemi
2.5W(Ta)，104W(Tc) 20V 3V@ 250µA 131nC@ 10V 1individualNChannel 60V 6.7mΩ@ 13.6A,10V 13.6A，49A 6.94nF@30V QFN SMD mount 6mm*5mm*1.1mm
UnikeyIC
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Fairchild Semiconductor
MOSFET,N CH,60V,13.6A,POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0056ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:104W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; SVHC:No SVHC (19-Dec-2011)
Farnell

Immagini

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