onsemi FDMS3626S
$ 0.863
Obsolete
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Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-12-14
Lifecycle StatusObsolete (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
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Descrizioni
Descrizioni di onsemi FDMS3626S fornite dai suoi distributori.
Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET, 25V
25 V ASYMMETRIC DUAL N-CHANNEL POWERTRENCH POWERSTAGE MOSFET Small Signal Field-Effect Transistor, 17.5A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
MountSurface Mount
Number of Pins8
Number of Terminals6
Weight90 mg
Technical
Continuous Drain Current (ID)17.5 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance5 mΩ
Drain to Source Voltage (Vdss)25 V
Element ConfigurationDual
Gate to Source Voltage (Vgs)12 V
Input Capacitance1.57 nF
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Elements2
Power Dissipation2.5 W
Rds On Max5 mΩ
Turn-Off Delay Time23 ns
Turn-On Delay Time7 ns
Dimensions
Height1.05 mm
Length5.1 mm
Width6.1 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità