onsemi FDMS2734
$ 3.69
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Cronologia dell'inventario
Tendenza a 3 mesi: -100%
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-11-17
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Descrizioni
Descrizioni di onsemi FDMS2734 fornite dai suoi distributori.
N-Channel UltraFET Trench® MOSFET 250V, 14A, 122mΩ
Transistor, MOSFET, N-Ch, 250V, 2.8A, 8-MLP, Power56, SMD
MOSFET, N, SMD, MLP; Transistor Type:UltraFET; Transistor Polarity:N; Voltage, Vds Typ:250V; Current, Id Cont:2.5A; Resistance, Rds On:0.122ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:Power 56; Termination Type:SMD; Current, Idm Pulse:16A; Marking, SMD:FDMS2734; Pins, No. of:8; Power Dissipation:2.5W; Voltage, Vds Max:250V; Voltage, Vgs th Max:4V
UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -100%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight210 mg
Technical
Continuous Drain Current (ID)2.8 A
Current Rating14 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance122 mΩ
Drain to Source Voltage (Vdss)250 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.365 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation78 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max122 mΩ
Resistance122 MΩ
Rise Time10 ns
Schedule B8541290080
Turn-Off Delay Time36 ns
Turn-On Delay Time22 ns
Voltage Rating (DC)250 V
Dimensions
Height800 µm
Length5 mm
Width6 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità