onsemi FDMS0312AS
$ 0.316
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | FDMS0312AS | 48.000 | 4546 | 12h | ||||||||
| Verical | FDMS0312AS | 7974 | 1264 | |||||||||
| Rochester Electronics | FDMS0312AS | 12.995 | 10h | |||||||||
| DigiKey | FDMS0312ASCT-ND | 468 | 1 | Cut Tape | ||||||||
| Flip Electronics | FDMS0312AS | 48.000 | >1wk |
Cronologia dell'inventario
Tendenza a 3 mesi: -0.18%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Modelli CAD
Scarica il simbolo onsemi FDMS0312AS, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 SnapEDA | Impronta | Scarica |
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-08-24
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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VISHAY SIRA14DP-T1-GE3 MOSFET Transistor, N Channel, 20 A, 30 V, 0.00425 ohm, 10 V, 1.1 V
Descrizioni
Descrizioni di onsemi FDMS0312AS fornite dai suoi distributori.
2.5W(Ta),36W(Tc) 20V 3V@1mA 31nC@ 10V 1N 30V 5m¦¸@ 18A,10V 18A,22A 1.815nF@15V QFN 6mm*5mm*1.1mm
N-Channel PowerTrench® SyncFET™ 30V, 22A, 5.0mΩ
TRANS MOSFET N-CH 30V 18A 8-PIN POWER 56
MOSFET Gaming/DT/Notebook/NVDC/Server
Power Field-Effect Transistor, 18A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
POWER FIELD-EFFECT TRANSISTOR, 1
TAPE REEL / SINGLE PT8 N 30/20 SYNCFET
The FDMS0312AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -0.18%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight74 mg
Technical
Continuous Drain Current (ID)18 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.815 nF
Max Operating Temperature150 °C
Max Power Dissipation36 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel (TR)
Rds On Max5 mΩ
Rise Time2.3 ns
Turn-Off Delay Time25 ns
Turn-On Delay Time10 ns
Dimensions
Height1 mm
Length6 mm
Width5 mm
Conformità
Classificazione ambientale
China RoHSCompliant
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità