onsemi FDME1024NZT
$ 0.325
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | 88T3288 | 2 | 1 | 12h | ||||||||
| Newark | FDME1024NZT | 2920 | 1 | Cut Tape | ||||||||
| Onlinecomponents.com | FDME1024NZT | 0 | 100 | Bulk | ||||||||
| Master Electronics | FDME1024NZT | 0 | 100 | |||||||||
| Future Electronics | FDME1024NZT | 0 | 5K | Tape & Reel |
Cronologia dell'inventario
Tendenza a 3 mesi: Restocked
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Modelli CAD
Scarica il simbolo onsemi FDME1024NZT, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 EE Concierge | SimboloImpronta | ||
 SnapEDA | Impronta | Scarica |
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
Supply Chain
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-12-10
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
onsemiFDME1034CZT
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 3.8 A, 3.8 A, 0.055 ohm
Diodes Inc.ZXMN2F34FHTA
Power MOSFET, Low Voltage, N Channel, 20 V, 4 A, 0.06 ohm, SOT-23, Surface Mount
VishaySI5515CDC-T1-E3
Dual N/P-Channel 20 V 2.1/1.3 W 11.3/11 nC Silicon SMT Mosfet - 1206-8 ChipFET
InfineonIRF7307PBF
Dual N/P-Channel 20 V 0.05/0.09 Ohm 20/22 nC HEXFET® Power Mosfet - SOIC-8
Descrizioni
Descrizioni di onsemi FDME1024NZT fornite dai suoi distributori.
Dual N-Channel Power Trench® MOSFET 20V, 3.8A, 66mΩ
Dual N-Channel PowerTrench MOSFET 20 V, 3.8 A, 66 m | MOSFET 2N-CH 20V 3.8A 6-MICROFET
MOSFET, NN CH, 20V, 3.8A, MFET1.6X1.6; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:3.8A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.055ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:700mV; Power Dissipation Pd:1.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:6; MSL:MSL 1 - Unlimited
This device is designed specifically as a single package solution for dual switching requirement in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: Restocked
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight25.2 mg
Technical
Continuous Drain Current (ID)3.8 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance66 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationDual
Fall Time1.7 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance300 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.3 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation600 mW
Rds On Max66 mΩ
Rise Time2 ns
Schedule B8541290080
Threshold Voltage700 mV
Turn-Off Delay Time15 ns
Turn-On Delay Time4.5 ns
Dimensions
Height550 µm
Length1.6 mm
Width1.6 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità