onsemi FDMC86570L
$ 1.62
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | FDMC86570L | 1065 | 1 | Cut Tape | ||||||||
| DigiKey | FDMC86570LCT-ND | 4622 | 1 | Cut Tape | ||||||||
| Onlinecomponents.com | FDMC86570L | 0 | 750 | Bulk | ||||||||
| Master Electronics | FDMC86570L | 0 | 750 | |||||||||
| Future Electronics | FDMC86570L | 0 | 3K | Tape & Reel |
Cronologia dell'inventario
Tendenza a 3 mesi: -0.78%
Modelli CAD
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Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDMC86570L.
Modelli CAD
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| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
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 EE Concierge | SimboloImpronta | ||
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2013-06-07
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
VishaySIR670DP-T1-GE3
MOSFET N-CH 60V 60A PPAK SO-8 / Trans MOSFET N-CH 60V 60A 8-Pin PowerPAK SO EP T/R
onsemiNVMFS5C670NLT1G
Single N-Channel Power MOSFET 60V, 71A, 6.1mΩ Power MOSFET 60 V, 6.4 mohm, 67 A, Single N-Channel
onsemiNTMFS5C670NLT1G
TRANSISTOR, MOSFET, POWER, SINGLE, N-CHANNEL, 60V, 6.1MOHM, 71A, NTMFS5C670NL
InfineonBSC066N06NSATMA1
Power MOSFET, N Channel, 60 V, 64 A, 0.0055 ohm, TDSON, Surface Mount
Descrizioni
Descrizioni di onsemi FDMC86570L fornite dai suoi distributori.
PT7 N-ch 60/20V Power Trench MOSFET - 8LD, PQFN, POWERCLIP SINGLE, JEDEC, MO-240, 3.3X3.3 MM
N-Channel Shielded Gate PowerTrench® MOSFET 60V , 84A, 4.3mΩ
N-Channel 60 V 87 A 4.3 mO Surface Mount PowerTrench Mosfet - Power33
Power Field-Effect Transistor, 18A I(D), 60V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
MOSFET, N-CH, 60V, 84A, POWER 33-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 84A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0031ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V;
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -0.78%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight152.7 mg
Technical
Continuous Drain Current (ID)18 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance4.3 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.705 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation54 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel
Power Dissipation2.3 W
Rds On Max4.3 mΩ
Rise Time12 ns
Schedule B8541290080
Threshold Voltage1.8 V
Turn-Off Delay Time38 ns
Turn-On Delay Time19 ns
Dimensions
Height800 µm
Length3.4 mm
Width3.4 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDMC86570L.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità