onsemi FDMC86012
$ 0.939
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Cronologia dell'inventario
Tendenza a 3 mesi: +97.28%
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2012-10-11
Lifecycle StatusProduction (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 days ago)
Parti correlate
onsemiFDMS8660AS
2.5W(Ta)，104W(Tc) 3V@1mA 83nC@ 10V 1individualNChannel 30V 2.1mΩ@ 28A,10V 5.865pF@15V 8PQFN SMD mount
InfineonBSC020N03LSGATMA1
Power MOSFET, N Channel, 30 V, 176 A, 2 MilliOhms, TDSON, 8 Pins, Surface Mount
Descrizioni
Descrizioni di onsemi FDMC86012 fornite dai suoi distributori.
N-Channel Power Trench® MOSFET 30V, 88A, 2.7mΩ
TAPE REEL/RP5 30V/12V Nch Power Trench MOSFET
N-Channel 30 V 23A (Ta) 2.3W (Ta), 54W (Tc) Surface Mount Power33
Trans MOSFET N-CH 30V 23A 8-Pin Power 33 T/R
MOSFET 30V N-Channel PowerTrench MOSFET
2.3W(Ta), 54W(Tc) 12V 1.5V@250µA 38nC@4.5V 1 N-Ch 30V 2.7mΩ@23A,4.5V 23A 5.075nF@15V PQFN-8 SMD 3.3mm × 3.3mm × 800μm
Power Field-Effect Transistor, 23A I(D), 30V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
This device has been designed specifically to improve the efficiency of DC-DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low rDS(on) has been maintained to provide a sub logic-level device.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +97.28%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight152.7 mg
Technical
Continuous Drain Current (ID)23 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance2.7 mΩ
Drain to Source Voltage (Vds)30 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance5.075 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation54 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel
Power Dissipation2.3 W
Rds On Max2.7 mΩ
Rise Time11 ns
Schedule B8541290080
Turn-Off Delay Time43 ns
Turn-On Delay Time20 ns
Dimensions
Height800 µm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
Dichiarazioni di conformità