onsemi FDMC8026S
$ 0.516
Obsolete
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Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
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Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDMC8026S.
Modelli CAD
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Supply Chain
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-03-22
Lifecycle StatusObsolete (Last Updated: 5 days ago)
LTB Date2021-10-08
LTD Date2022-04-08
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)
Parti correlate
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Single N-Channel 30 V 3.9 mOhm 6.5 W Surface Mount Power Mosfet - SOIC-8
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25V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS
InfineonIRFHM4231TRPBF
25V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS
Descrizioni
Descrizioni di onsemi FDMC8026S fornite dai suoi distributori.
N-Channel PowerTrench® SyncFET™ 30V, 21A, 4.4mΩ
2.4W(Ta)，36W(Tc) 20V 3V@1mA 52nC@ 10V 1individualNChannel 30V 4.4mΩ@ 19A,10V 19A，21A 3.165nF@15V MLP-8 SMD mount 3.3mm*3.3mm*750μm
The FDMC8026S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic schottky body diode.
MOSFET, N CH, 30V, 21A, MLP 3.3X3.3; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0038ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:36W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
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Specifiche tecniche
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight165.33333 mg
Technical
Continuous Drain Current (ID)19 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance4.4 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.165 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation36 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation2.4 W
Rds On Max4.4 mΩ
Rise Time5 ns
Threshold Voltage1.6 V
Turn-Off Delay Time30 ns
Turn-On Delay Time11 ns
Dimensions
Height800 µm
Length3.3 mm
Width3.3 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDMC8026S.
Conformità
Classificazione ambientale
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità