onsemi FDMA6676PZ

P-Channel PowerTrench® MOSFET -30V, -11A, 13.5mΩ

PT8PZ 30/25V VIS with 2.05x2.05 PQFN pkg - 6LD, PQFN, NON-JEDEC, 2.05X2.05 MM

MOSFET, P-CH, -30V, -11A, 150DEG C, 2.4W; Transistor Polarity: P Channel; Continuous Drain Current Id: -11A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage V

This device is an ultra low resistance P-Channel FET. It is designed for power line load switching applications and reverse polarity protection. It is especially optimized for voltage rails that can climb as high as 25V. Typical end systems include laptop computers, tablets and mobile phone. Applications include battery protection, input power line protection and charge path protection, including USB and other charge paths. The FDMA6676PZ has an enhanced VGS rating of 25V specifically designed to simplify installation. When used as reverse polarity protection, with gate tied to ground and drain tied to V input, it is designed to support operating input voltages that can raise as high as 25V without the need for external Zener protection on the gate. Its small 2x2x0.8 form factor make it an ideal part for mobile and space constrained applications.