onsemi FDMA6023PZT
$ 0.396
EOL
Prezzo e stock
Distributori autorizzati
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Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | FDMA6023PZT | 11.983 | 786 | |||||||||
| Rochester Electronics | FDMA6023PZT | 11.983 | 18h | |||||||||
| Microchip USA | FDMA6023PZT | 148 | 3500 | Tray | 2d | |||||||
| Win Source | WS-FDMA6023PZT | 15.206 | 55 | 19h | ||||||||
| ICPartonline | FDMA6023PZT | 29.300 | >1wk |
Cronologia dell'inventario
Tendenza a 3 mesi: -43.28%
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|---|---|---|---|
 EE Concierge | SimboloImpronta |
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Supply Chain
Lifecycle StatusEOL (Last Updated: 6 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 6 days ago)
Descrizioni
Descrizioni di onsemi FDMA6023PZT fornite dai suoi distributori.
Supplied as a Tape, Dual P-Channel MOSFET, 3.6 A, 20 V, 6-Pin MLP ON Semiconductor FDMA6023PZT
Dual P-Channel PowerTrench® MOSFET -20V, -3.6A, 60mΩ
Dual P-Channel 20 V 0.06 O 12 nC PowerTrench Mosfet - MicroFET-6EP 2x2
MOSFET,PP CH,20V,3.6A,MIRCOFET2X2; Transistor Polarity:P Channel; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-500mV; Power Dissipation Pd:1.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:-3.6A; Drain Source Voltage Vds:-20V; Module Configuration:Dual; On Resistance Rds(on):0.04ohm; Power Dissipation Pd:1.4W
This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET 2X2 Thin package offers exceptional thermal performance for it’s physical size and is well suited to linear mode applications.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -43.28%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageModule
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight40 mg
Technical
Continuous Drain Current (ID)3.6 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance60 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationDual
Fall Time11 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance885 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.4 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs-500 mV
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation700 mW
Rds On Max60 mΩ
Rise Time11 ns
Schedule B8541290080
Threshold Voltage-500 mV
Turn-Off Delay Time75 ns
Turn-On Delay Time13 ns
Dimensions
Height550 µm
Length2 mm
Width2 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità