onsemi FDMA530PZ
$ 0.407
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Cronologia dell'inventario
Tendenza a 3 mesi: -28.46%
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Supply Chain
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-01-10
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
Diodes Inc.DMN3033LDM-7
N-Channel 30 V 33 mOhm Surface Mount Enhancement Mode Mosfet - SOT-26-6
InfineonIRF7201TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.03Ohm;ID 7.3A;SO-8;PD 2.5W;VGS +/-20V;-55d
InfineonIRF7201PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.03Ohm;ID 7.3A;SO-8;PD 2.5W;VGS +/-20V;-55d
Descrizioni
Descrizioni di onsemi FDMA530PZ fornite dai suoi distributori.
P-Channel PowerTrench® MOSFET-30V, -6.8A, 35mΩ
30 Volt P Channel PowerTrench Mosfet 6.8A RDSon 35mR
MOSFET P-CH 30V 6.8A MLP2X2 / Trans MOSFET P-CH 30V 6.8A 6-Pin WDFN EP T/R
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:-6.8A; Drain Source Voltage, Vds:-30V; On Resistance, Rds(on):30mohm; Rds(on) Test Voltage, Vgs:25V; Threshold Voltage, Vgs Typ:-2.1V
This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications . It features a MOSFET with low on-state resistance.The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -28.46%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
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Specifiche tecniche
Physical
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight30 mg
Technical
Continuous Drain Current (ID)6.8 A
Current Rating-6.8 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance65 mΩ
Drain to Source Voltage (Vdss)-30 V
Dual Supply Voltage-30 V
Element ConfigurationSingle
Fall Time31 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.07 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.4 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs25 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation900 mW
Rds On Max35 mΩ
Resistance35 MΩ
Rise Time21 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage-2.1 V
Turn-Off Delay Time43 ns
Turn-On Delay Time6 ns
Voltage Rating (DC)-30 V
Dimensions
Height800 µm
Length2 mm
Width2 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità