onsemi FDMA430NZ
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Supply Chain
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2006-01-10
Lifecycle StatusProduction (Last Updated: 4 days ago)
LTB Date2026-01-01
LTD Date2026-07-01
Manufacturer Lifecycle StatusLIFETIME (Last Updated: 4 days ago)
Parti correlate
InfineonIRLML6344TRPBF
Transistor: N-MOSFET; unipolar; 30V; 5A; 29ohm; 1.3W; -55+150 deg.C; SMD; SOT23
VishaySI4532CDY-T1-GE3
SI4532CDY-T1-GE3 DUAL N/P-CHANNEL MOSFET TRANSISTOR,4.3 A,6 A,30V,8-PIN SOIC
Diodes Inc.ZXMN3F30FHTA
ZXMN3F30 Series 30 V 0.047 Ohm N-Channel Enhancement Mode MOSFET - SOT-23
Descrizioni
Descrizioni di onsemi FDMA430NZ fornite dai suoi distributori.
N-Channel PowerTrench® MOSFET, 2.5V Specified, 30V, 5.0A, 40mΩ
30V,5.0A,40 OHM, SINGLE NCH SPECIFIED POWER TRENCH MOSFET
Power Field-Effect Transistor, 5A I(D), 30V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 30V 5A 6-Pin WDFN EP T/R
N CH MOSFET, 30V, 5A, MICROFET 2X2
FDMA430 - SINGLE N-CHANNEL 2.5V
This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(on) @VGS=2.5V on special MicroFET leadframe.
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):23.6mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:810mV; Power Dissipation Pd:900mW; Transistor Case Style:MicroFET; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:5A; Package / Case:MicroFET; Power Dissipation Pd:900mW; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:810mV; Voltage Vgs Rds on Measurement:4.5V
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Trend storico dell'inventario non disponibile
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
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Specifiche tecniche
Physical
Contact PlatingGold
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight30 mg
Technical
Continuous Drain Current (ID)5 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance50 mΩ
Drain to Source Voltage (Vds)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time7.1 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance800 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.4 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs810 mV
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation2.4 W
Rds On Max40 mΩ
Resistance40 MΩ
Rise Time7.1 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage810 mV
Turn-Off Delay Time18.1 ns
Turn-On Delay Time8.3 ns
Dimensions
Height825 µm
Length2 mm
Width2 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
Dichiarazioni di conformità