onsemi FDMA410NZ
$ 0.454
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Cronologia dell'inventario
Tendenza a 3 mesi: -11.91%
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Supply Chain
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-09-19
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
VishaySI7232DN-T1-GE3
SI7232DN-T1-GE3 Dual N-channel MOSFET Transistor; 24 A; 20V; 8-Pin PowerPAK 1212
Diodes Inc.DMN2022UFDF-7
Mosfet, N-Ch, 20V, 7.9A, U-Dfn2020 Rohs Compliant: Yes |Diodes Inc. DMN2022UFDF-7
Descrizioni
Descrizioni di onsemi FDMA410NZ fornite dai suoi distributori.
N-Channel PowerTrench® MOSFET, 1.5 V Specified, 20V, 9.5A, 23mΩ
FDMA410NZ Series 20 V 9.5 A 23 mOhm N-Ch PowerTrench® MOSFET - MicroFET-6
Power MOSFET, N Channel, 20 V, 9.5 A, 0.023 ohm, MicroFET, Surface Mount
This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET leadframe.
MOSFET Transistor; Transistor Polarity:N; MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:9.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):23mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700mV; Power Dissipation Pd:900mW
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -11.91%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Specifiche tecniche
Physical
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight30 mg
Technical
Continuous Drain Current (ID)9.5 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance23 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time3.7 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance1.08 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.4 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs700 mV
Number of Channels1
Number of Elements1
Power Dissipation2.4 W
Rds On Max23 mΩ
Resistance23 MΩ
Rise Time3.9 ns
Schedule B8541290080
Turn-Off Delay Time27 ns
Turn-On Delay Time7.5 ns
Dimensions
Height800 µm
Length2 mm
Width2 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità