MOSFET, DUAL, P, SMD, MLP; Transistor type:PowerTrench; Voltage, Vds typ:-20V; Current, Id cont:3.1A; Resistance, Rds on:0.155ohm; Voltage, Vgs Rds on measurement:-4.5V; Voltage, Vgs th typ:-0.9V; Case style:MicroFET; Current, Idm RoHS Compliant: Yes

Newark

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra - portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and well suited to linear mode applications.

Fairchild Semiconductor

MOSFET, DUAL, P, SMD, MLP; Module Configuration:Dual; Transistor Polarity:P Channel; Continuous Drain Current Id:3.1A; Drain Source Voltage Vds:20V; On State Resistance:155mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-900mV; Power Dissipation Pd:1.4W; Transistor Case Style:MicroFET; No. of Pins:6; SVHC:No SVHC (15-Dec-2010); Current Id Max:-3.1A; Package / Case:MicroFET; Termination Type:SMD; Transistor Type:Trench; Pulse Current Idm:6A; SMD Marking:025; Voltage Vds Typ:-20V; Voltage Vgs Rds on Measurement:-4.5V; Voltage Vgs th Max:-1.5V

Farnell

Immagini

element14

Rochester Electronics

LZChips

Alias del produttore

onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:

ON Semiconductor
ONS
ONSEMICON
ON SEM
ON SEMICONDUCTO
ON SEMICONDUCTORS
ONSEMIC
ON Semicondu
OSC
ONSE
ON SEMICOND
ON Semiconductor / Fairchild
SCG
ON Semiconductor Cor
ON SEMICO
ONSM
ON SEMICONDUCTOR CORP
onsemi / Fairchild
MOT/ON SEMI
Fairchild/ONSemiconductor
ON Semiconductor Corporation
ON4
ON Semi - ON Semiconductor
ON SEMICONDUCT
ON-SEMI SCG
ON Semiconductor Inc.
onsemiconductor
On Semiconductor Ltd

Cronologia dell'inventario

Tendenza a 3 mesi: -0.04%

Modelli CAD

Scarica il simbolo, l'impronta e il 3D STEP

Parti alternative

0 parti disponibili

Specifiche tecniche

Physical

MountSurface Mount

Number of Pins6

Number of Terminals6

Weight40 mg

Technical

Continuous Drain Current (ID)3.1 A

Current Rating-3.1 A

Drain to Source Breakdown Voltage-20 V

Drain to Source Resistance220 mΩ

Element ConfigurationDual

Fall Time14 ns

Gate to Source Voltage (Vgs)12 V

Input Capacitance450 pF

Max Operating Temperature150 °C

Max Power Dissipation1.4 W

Min Breakdown Voltage20 V

Min Operating Temperature-55 °C

Number of Elements2

Power Dissipation1.4 W

Rds On Max155 mΩ

Rise Time14 ns

Threshold Voltage-900 mV

Turn-Off Delay Time13 ns

Turn-On Delay Time5 ns

Voltage Rating (DC)-20 V

Dimensions

Height750 µm

Length2 mm

Width2 mm

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi FDMA1025P.

IHS

Datasheet0 pagine0 anni fa

onsemi

Fairchild Semiconductor

Mouser

Future Electronics

Conformità

Classificazione ambientale

China RoHSCompliant

Lead FreeLead Free

REACH SVHCYes

RoHSCompliant

Dichiarazioni di conformità

Rohs Statement3 pagine5 anni fa

Reach Statement3 pagine12 anni fa

Materials Sheet3 pagine12 anni fa

Reach Statement3 pagine11 anni fa

Materials Sheet3 pagine11 anni fa

Reach Statement8 pagine11 anni fa

Rohs Statement1 pagina13 anni fa

Rohs Statement1 pagina14 anni fa

Reach Statement2 pagine13 anni fa

Rohs StatementN/AN/A