This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Fairchild Semiconductor

Immagini

Augswan

Rochester Electronics

Alias del produttore

onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:

ON Semiconductor
ONS
ONSEMICON
ON SEM
ON SEMICONDUCTO
ON SEMICONDUCTORS
ONSEMIC
ON Semicondu
OSC
ONSE
ON SEMICOND
ON Semiconductor / Fairchild
SCG
ON Semiconductor Cor
ON SEMICO
ONSM
ON SEMICONDUCTOR CORP
onsemi / Fairchild
MOT/ON SEMI
Fairchild/ONSemiconductor
ON Semiconductor Corporation
ON4
ON Semi - ON Semiconductor
ON SEMICONDUCT
ON-SEMI SCG
ON Semiconductor Inc.
onsemiconductor
On Semiconductor Ltd

Cronologia dell'inventario

Tendenza a 3 mesi: +0.00%

Specifiche tecniche

Physical

Case/PackageTO-262-3

MountThrough Hole

Number of Terminals3

Weight2.084 g

Technical

Continuous Drain Current (ID)120 A

Drain to Source Breakdown Voltage60 V

Drain to Source Resistance4 mΩ

Drain to Source Voltage (Vdss)60 V

Element ConfigurationSingle

Fall Time24 ns

Gate to Source Voltage (Vgs)20 V

Input Capacitance8.235 nF

Max Operating Temperature175 °C

Max Power Dissipation231 W

Min Breakdown Voltage60 V

Min Operating Temperature-55 °C

Number of Elements1

Power Dissipation231 W

Rds On Max4 mΩ

Rise Time40 ns

Turn-Off Delay Time55 ns

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi FDI040N06.

IHS

Datasheet8 pagine21 anni fa

Datasheet0 pagine0 anni fa

Fairchild Semiconductor

Conformità

Classificazione ambientale

REACH SVHCNo

RoHSCompliant

Dichiarazioni di conformità

Reach Statement8 pagine11 anni fa

Rohs Statement1 pagina13 anni fa

Rohs Statement1 pagina14 anni fa

Reach Statement2 pagine13 anni fa