onsemi FDG6308P
EOL
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Schede tecniche e documenti
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2000-11-15
Lifecycle StatusEOL (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
Parti correlate
onsemiNTA4151PT1
Tape & Reel (TR) Surface Mount P-Channel Single Mosfet Transistor 760mA Tj 760mA 301mW 8.2ns
Descrizioni
Descrizioni di onsemi FDG6308P fornite dai suoi distributori.
TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,20V V(BR)DSS,600mA I(D),TSOP
PowerTrench® MOSFET, Dual P-Channel 1.8V Specified, -20 V, -0.6 A, 400 mΩ
Trans MOSFET P-CH 20V 0.6A 6-Pin SC-88 T/R / MOSFET 2P-CH 20V 0.6A SC70-6
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
MOSFET, DUAL P-CH, -20V, -0.6A, SC-70; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: -600mA; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.27ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -900mV; Power Dissipation Pd: 300mW; Transistor Case Style: SC-70; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Specifiche tecniche
Physical
Case/PackageSC
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight28 mg
Technical
Continuous Drain Current (ID)600 mA
Current Rating-600 mA
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance400 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationDual
Fall Time15 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance153 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation300 mW
Rds On Max400 mΩ
Resistance400 MΩ
Rise Time15 ns
Schedule B8541210080
Turn-Off Delay Time7 ns
Turn-On Delay Time5 ns
Voltage Rating (DC)-20 V
Dimensions
Height1.1 mm
Length2 mm
Width1.25 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDG6308P.
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità