onsemi FDFM2P110

Integrated P-Channel PowerTrench® MOSFET and Schottky Diode -20 V, -3.5 A, 140 mΩ
$ 0.327
Obsolete
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Fairchild Semiconductor

Datasheet7 pagine25 anni fa
Technical Drawing1 pagina19 anni fa

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Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-04-07
Lifecycle StatusObsolete (Last Updated: 1 week ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 week ago)

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Descrizioni

Descrizioni di onsemi FDFM2P110 fornite dai suoi distributori.

Integrated P-Channel PowerTrench® MOSFET and Schottky Diode -20 V, -3.5 A, 140 mΩ
Power Field-Effect Transistor, 3.5A I(D), 20V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-229WEEA
MOSFET, P, FETKY, SMD, MLP; Transistor Type:MOSFET + Schottky; Transistor Polarity:P; Voltage, Vds Typ:-20V; Current, Id Cont:3.5A; Resistance, Rds On:0.14ohm; Voltage, Vgs Rds on Measurement:-4.5V; Voltage, Vgs th Typ:-1V; Case Style:Power 33; Termination Type:SMD; Current, Id Max:-10A; Current, If AV:1mA; No. of Pins:6; Power Dissipation:2mW; Voltage, Vds Max:20V; Voltage, Vf Max:0.39V; Voltage, Vgs th Max:-1.5V
FDFM2P110 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a MicroFET package. This device is designed specifically as a single package solution for Buck Boost. It features a fast switching, low gate charge MOSFET with very low on-state resistance.

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