onsemi FDD6N50FTM
$ 0.571
EOL
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | FDD6N50FTM | 1345 | 455 | |||||||||
| Rochester Electronics | FDD6N50FTM | 1345 | 4h | |||||||||
| DigiKey | FDD6N50FTMCT-ND | 6011 | 1 | Cut Tape | ||||||||
| Flip Electronics | FDD6N50FTM | 5000 | 6d | |||||||||
| Farnell | FDD6N50FTM | 0 | 1 | Cut Tape | 1d |
Cronologia dell'inventario
Tendenza a 3 mesi: -0.16%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDD6N50FTM.
Modelli CAD
Scarica il simbolo onsemi FDD6N50FTM, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 Component Search Engine | SimboloImpronta | Scarica | |
 SnapEDA | Impronta | 3D | Scarica |
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2007-07-25
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
Parti correlate
STMicroelectronicsSTD6NK50ZT4
N-CHANNEL 500V - 0.93͐2;6; - 5.6A DPAK Zener-Protected SuperMESH™ MOSFET
STMicroelectronicsSTD7NK40ZT4
N-Channel 400V - 0.85 Ohm - 5.4A Zener-Protected SuperMESH(TM) POWER MOSFET
Descrizioni
Descrizioni di onsemi FDD6N50FTM fornite dai suoi distributori.
N-Channel Power MOSFET, UniFETTM, FRFET®, 500 V, 5.5 A, 1.15 Ω, DPAK
N-Channel 500 V 1.15 Ohm Surface Mount UniFET FRFET Mosfet TO-252-3
Power Field-Effect Transistor, 5.5A I(D), 500V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -0.16%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)5.5 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance1.15 Ω
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time20.5 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance960 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation89 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation89 W
Rds On Max1.15 Ω
Resistance1.15 Ω
Rise Time28.3 ns
Turn-Off Delay Time33.4 ns
Turn-On Delay Time17 ns
Dimensions
Height2.517 mm
Length6.73 mm
Width6.22 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDD6N50FTM.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità