onsemi FDD6796A
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDD6796A.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-03-03
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Parti correlate
onsemiNTD78N03T4G
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 11.4A Ta 78A Tc 78A 64W 42ns
STMicroelectronicsSTD100N3LF3
N-channel 30 V, 0.0045 Ohm typ., 80 A STripFET(TM) II Power MOSFET in a DPAK package
Descrizioni
Descrizioni di onsemi FDD6796A fornite dai suoi distributori.
Trans MOSFET N-CH 25V 20A 3-Pin(2+Tab) DPAK T/R
Power Field-Effect Transistor, 20A I(D), 25V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
20A, 25V, 0.0057OHM, N-CHANNEL ,
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Specifiche tecniche
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)20 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance5.7 mΩ
Drain to Source Voltage (Vdss)25 V
Element ConfigurationSingle
Fall Time4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.78 nF
Max Operating Temperature175 °C
Max Power Dissipation42 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation3.7 W
Rds On Max5.7 mΩ
Rise Time7 ns
Turn-Off Delay Time19 ns
Turn-On Delay Time8 ns
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDD6796A.
Conformità
Classificazione ambientale
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità