UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Fairchild Semiconductor

Alias del produttore

onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:

ON Semiconductor
ONS
ONSEMICON
ON SEM
ON SEMICONDUCTO
ON SEMICONDUCTORS
ONSEMIC
ON Semicondu
OSC
ONSE
ON SEMICOND
ON Semiconductor / Fairchild
SCG
ON Semiconductor Cor
ON SEMICO
ONSM
ON SEMICONDUCTOR CORP
onsemi / Fairchild
MOT/ON SEMI
Fairchild/ONSemiconductor
ON Semiconductor Corporation
ON4
ON Semi - ON Semiconductor
ON SEMICONDUCT
ON-SEMI SCG
ON Semiconductor Inc.
onsemiconductor
On Semiconductor Ltd

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

FDD5N50FTMWS
FDD5N50FTM_WS

Cronologia dell'inventario

Tendenza a 3 mesi: -42.86%

Specifiche tecniche

Physical

Case/PackageDPAK

MountSurface Mount

Number of Pins3

Number of Terminals2

Weight260.37 mg

Technical

Continuous Drain Current (ID)3.5 A

Drain to Source Breakdown Voltage500 V

Drain to Source Resistance1.55 Ω

Drain to Source Voltage (Vdss)500 V

Element ConfigurationSingle

Fall Time20 ns

Gate to Source Voltage (Vgs)30 V

Input Capacitance650 pF

Max Operating Temperature150 °C

Max Power Dissipation40 W

Min Breakdown Voltage500 V

Min Operating Temperature-55 °C

Number of Elements1

Power Dissipation40 W

Rds On Max1.55 Ω

Rise Time22 ns

Turn-Off Delay Time28 ns

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi FDD5N50FTM-WS.

Scheda dati ufficiale10 anni fa

Conformità

Classificazione ambientale

China RoHSNon-Compliant

REACH SVHCNo

RoHSCompliant

Dichiarazioni di conformità

Rohs Statement3 pagine5 anni fa

Reach Statement4 pagine9 anni fa

Materials Sheet3 pagine9 anni fa

Reach Statement8 pagine11 anni fa

Rohs Statement1 pagina13 anni fa

Rohs Statement1 pagina14 anni fa

Reach Statement2 pagine13 anni fa

Rohs StatementN/AN/A