onsemi FDC653N
$ 0.293
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Cronologia dell'inventario
Tendenza a 3 mesi: -25.23%
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-11-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
STMicroelectronicsSTT6N3LLH6
N-channel 30 V, 0.021 Ohm, 6 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in SOT23-6L package
Diodes Inc.DMG6402LVT-7
Mosfet, N-Ch, 30V, 6A, Tsot-26 Rohs Compliant: Yes |Diodes Inc. DMG6402LVT-7
Diodes Inc.DMN3135LVT-7
Mosfet Bvdss: 25V~30V Tsot26 T&r 3K Rohs Compliant: Yes |Diodes Inc. DMN3135LVT-7
Descrizioni
Descrizioni di onsemi FDC653N fornite dai suoi distributori.
N-Channel Enhancement Mode Field Effect Transistor 30V, 5A, 35mΩ
1.6W(Ta) 20V 2V@ 250¦ÌA 17nC@ 10 V 1N 30V 35m¦¸@ 5A,10V 5A 350pF@15V 2.9mm*1.6mm*1mm
Trans MOSFET N-CH 30V 5A 6-Pin SuperSOT T/R
Avnet Japan
ON SEMICONDUCTOR - FDC653N - Power MOSFET, N Channel, 30 V, 5 A, 0.035 ohm, SuperSOT, Surface Mount
30V N-Fet 35 Mo Ssot6 Rohs Compliant: Yes
Small Signal Field-Effect Transistor, 5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
FDC653N,006, PLASTIC MOLDED, S UPER SOT-6 PKG, SINGLE, SMD (
SMALL SIGNAL FIELD-EFFECT TRANSI
This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -25.23%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Specifiche tecniche
Physical
Case/PackageSOT-23-6
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight30 mg
Technical
Continuous Drain Current (ID)5 A
Current Rating5 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance55 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance350 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.6 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.7 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation1.6 W
Rds On Max35 mΩ
Resistance35 MΩ
Rise Time12 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage1.7 V
Turn-Off Delay Time13 ns
Turn-On Delay Time7.5 ns
Voltage Rating (DC)30 V
Dimensions
Height1.1 mm
Length3 mm
Width1.7 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità