onsemi FDC645N
$ 0.401
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Tendenza a 3 mesi: -58.82%
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Schede tecniche e documenti
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-07-20
Lifecycle StatusProduction (Last Updated: 5 days ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 days ago)
Parti correlate
STMicroelectronicsSTT6N3LLH6
N-channel 30 V, 0.021 Ohm, 6 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in SOT23-6L package
Diodes Inc.DMP3105LVT-7
P-Ch MOSFET 30V 75mΩ@4.2A,10V 3.1A 839pF@15V TSOT-26 SMD 1.15W(Ta) 12V 1.5V@250µA 19.8nC@10V
Diodes Inc.DMN3026LVT-7
1.2W(Ta) 20V 2V@250µA 12.5nC@10V 1 N-Ch 30V 23mΩ@6.5A,10V 6.6A 643pF@15V TSOT-23-6 SMD
Descrizioni
Descrizioni di onsemi FDC645N fornite dai suoi distributori.
N-Channel PowerTrench® MOSFET 30V, 5.5A, 26mΩ
N-Channel 30 V 26 mOhm Surface Mount PowerTrench Mosfet - SSOT-6
MOSFET, N SUPERSOT-6; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.4V; Power Dissipa
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
MOSFET, N, SUPERSOT-6; Transistor Polarity:N Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):26mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.4V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (15-Dec-2010); Current Id Max:5.5A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Package / Case:SuperSOT-6; Power Dissipation Pd:1.6W; Power Dissipation Pd:1.6W; Pulse Current Idm:20A; SMD Marking:FDC645N; Termination Type:SMD; Uni / Bi Directional Polarity:N; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -58.82%
Modelli CAD
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Specifiche tecniche
Physical
Case/PackageSOT-23-6
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight36 mg
Technical
Continuous Drain Current (ID)5.5 mA
Current Rating5.5 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance30 mΩ
Drain to Source Voltage (Vds)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance1.46 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.6 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.4 V
Number of Channels1
Number of Elements1
Power Dissipation1.6 W
Rds On Max26 mΩ
Resistance26 MΩ
Rise Time9 ns
Schedule B8541290080
Threshold Voltage1.4 V
Turn-Off Delay Time35 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)30 V
Dimensions
Height1.1 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDC645N.
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
Dichiarazioni di conformità