onsemi FDC6401N
$ 0.24
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Cronologia dell'inventario
Tendenza a 3 mesi: +11.52%
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2001-07-06
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
InfineonIRLMS1902TRPBF
MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 0.1Ohm;ID 3.2A;Micro6 (SOT-23);PD 1.7W;-55de
Diodes Inc.DMP2130LDM-7
20V 3.4A 1.25W 80mΩ@4.5V,4.5A 1.25V@250uA P Channel SOT-23-6 MOSFETs ROHS
Descrizioni
Descrizioni di onsemi FDC6401N fornite dai suoi distributori.
Dual N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 3.0A, 70mΩ
Transistor MOSFET Array Dual N-CH 20V 3A 6-Pin TSOT-23 T/R
Avnet Japan
MOSFET, DUAL, N, SMD, SUPERSOT-6; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:900mV; Power Dissipation Pd:960mW; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:3A; Current Id Max:3A; Drain Source Voltage Vds:20V; Module Configuration:Dual; On Resistance Rds(on):70mohm; Package / Case:SuperSOT-6; Power Dissipation Pd:960mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:900mV; Voltage Vgs Rds on Measurement:4.5V
This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +11.52%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Specifiche tecniche
Physical
Case/PackageSOT-23-6
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight36 mg
Technical
Continuous Drain Current (ID)3 A
Current Rating3 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance70 mΩ
Drain to Source Voltage (Vdss)20 V
Dual Supply Voltage20 V
Element ConfigurationDual
Fall Time1.6 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance324 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation700 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs900 mV
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation700 mW
Rds On Max70 mΩ
Resistance70 MΩ
Rise Time7 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage900 mV
Turn-Off Delay Time13 ns
Turn-On Delay Time5 ns
Voltage Rating (DC)20 V
Dimensions
Height1.1 mm
Length3 mm
Width1.7 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità