onsemi FDC6306P
$ 0.27
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Schede tecniche e documenti
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-02-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Descrizioni
Descrizioni di onsemi FDC6306P fornite dai suoi distributori.
Dual P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -1.9A, 170mΩ
MOSFET 2P-CH 20V 1.9A SSOT6 / Trans MOSFET P-CH 20V 1.9A 6-Pin TSOT-23 T/R
Dual P-Channel 20 V 0.170 Ohm 2.5 V Specified PowerTrench Mosfet - SSOT-6
These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
MOSFET, DUAL, PP, SUPERSOT-6; Module Configuration:Dual; Transistor Polarity:P Channel; Continuous Drain Current Id:1.9A; Drain Source Voltage Vds:20V; On Resistance Rds(on):170mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-900mV; Power Dissipation Pd:960mW; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:-1.9A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:2; Package / Case:SuperSOT-6; Power Dissipation Pd:960mW; Power Dissipation Pd:960mW; Pulse Current Idm:5A; SMD Marking:FCD6306P; Termination Type:SMD; Uni / Bi Directional Polarity:PP; Voltage Vds:20V; Voltage Vds Typ:-20V; Voltage Vgs Max:-900mV; Voltage Vgs Rds on Measurement:-4.5V; Voltage Vgs th Max:-1.5V
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -0.63%
Modelli CAD
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Specifiche tecniche
Physical
Case/PackageSOT-23-6
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight36 mg
Technical
Continuous Drain Current (ID)1.9 A
Current Rating-1.9 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance170 mΩ
Drain to Source Voltage (Vdss)-20 V
Dual Supply Voltage-20 V
Element ConfigurationDual
Fall Time9 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance441 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation960 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs-900 mV
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation900 mW
Rds On Max170 mΩ
Resistance170 mΩ
Rise Time9 ns
Schedule B8541210080
Threshold Voltage-900 mV
Turn-Off Delay Time14 ns
Turn-On Delay Time6 ns
Voltage Rating (DC)-20 V
Dimensions
Height1.1 mm
Length3 mm
Width1.7 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDC6306P.
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità