onsemi FDC6304P
$ 0.224
Obsolete
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Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-06-01
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2021-02-12
LTD Date2021-08-12
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
Parti correlate
Diodes Inc.DMP2033UVT-7
1.2W(Ta) 8V 900mV@ 250¦ÌA 10.4nC@ 4.5 V 1P 20V 65m¦¸@ 4.2A,4.5V 4.2A 845pF@15V TSOT-26
Descrizioni
Descrizioni di onsemi FDC6304P fornite dai suoi distributori.
Transistor MOSFET Positive Channel 25 Volt 0.46A 6-Pin SuperSOT T/R
900mW 8V 1.5V@ 250¦ÌA 1.5nC@ 4.5V 2P 25V 1.1¦¸@ 500mA,4.5V 460mA 62pF@10V SOT 2.9mm*1.6mm*1.1mm
Dual P-Channel Digital FET -25V, -0.46A, 1.1Ω
Trans MOSFET P-CH 25V 0.46A 6-Pin TSOT-23 T/R
Dual P-Channel 25 V 1.1 O Surface Mount Digital FET - SSOT-6
DUAL P CHANNEL MOSFET, -25V, SUPER SOT-6
Small Signal Field-Effect Transistor, 0.46A I(D), 25V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
25V DUAL P-CH. FET, 1.1 O, SSO
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-25V; Continuous Drain Current, Id:-0.46A; On Resistance, Rds(on):1.1ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SuperSOT-6 ;RoHS Compliant: Yes
These P-Channel enhancement mode field effect transistor are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
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Specifiche tecniche
Physical
Case/PackageSOT-23-6
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight36 mg
Technical
Continuous Drain Current (ID)460 mA
Current Rating-460 mA
Drain to Source Breakdown Voltage-25 V
Drain to Source Resistance1.5 Ω
Element ConfigurationDual
Fall Time8 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance62 pF
Max Operating Temperature150 °C
Max Power Dissipation900 mW
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Elements2
PackagingDigi-Reel®
Power Dissipation900 mW
Rds On Max1.1 Ω
Resistance1.1 Ω
Rise Time8 ns
Schedule B8541210080
Threshold Voltage-860 mV
Turn-Off Delay Time55 ns
Turn-On Delay Time7 ns
Voltage Rating (DC)-25 V
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità